Optical EPD to RF EPD

Optimizes Chamber Clean Process

Extends Mean Time Between Wet Cleans
Reduces consumable wear due to over etch
Clean times reduced by 10%-15%
Eliminates maintenance required by optical end point
Reduces particle excursions and requisite maintenance
- Eliminates film related particles due to under etching
- Eliminates AlF3 particles due to over etching
More comprehensive plasma measurement
Direct measurement of the RF system performance at the plasma
Diagnostic aid capability (faulty shower head, poor/failed RF connections, etc)
Ideal RF Network Indicator and Qualifier
In electrical contact with entire chamber
Z1: Chuck and wafer Impedance
Z2: Discharge and sheath impedance
Z3: Primary ground path impedance
Z4: Secondary ground path impedance.
Mounted in RF path, no degradation over time
No gain or filter adjustments required

Upgrades & Enhancements

New Refurbishment Programs

Reduced harmonics, quite, smooth operation means less vibration at the wafer Efficiency.

The megapak replaces the now obsolete Quad supplies, old 5V supply and Robot Power supply.